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SI2301BDS-T1-GE3


SI2301BDS-T1-GE3

Part NumberSI2301BDS-T1-GE3

Manufacturer

Description

Datasheet

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI2301BDS-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package3000
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds375pF @ 6V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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SI2301BDS-T1-GE3 - Tags

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