Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

Part NumberSI2301BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.2A SOT23-3

DatasheetSI2301BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301BDS-T1-GE3.
We are offering SI2301BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301BDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 6V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301BDS-T1-GE3 - Related Products

	RV2C014BCT2CL	Rohm Semiconductor, P-Channel 20V 700mA (Ta) 400mW (Ta) Surface Mount DFN1006-3,	View
	AO6405	Alpha & Omega Semiconductor Inc., P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount 6-TSOP,	View
	TSM600P03CS RLG	Taiwan Semiconductor Corporation, P-Channel 30V 4.7A (Tc) 2.1W (Tc) Surface Mount 8-SOP,	View
	TPS1100D	Texas Instruments, P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC,	View
	SI3459BDV-T1-E3	Vishay Siliconix, P-Channel 60V 2.9A (Tc) 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	BS250FTA	Diodes Incorporated, P-Channel 45V 90mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	AO4411	Alpha & Omega Semiconductor Inc., P-Channel 30V 8A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	FQU17P06TU	ON Semiconductor, P-Channel 60V 12A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK, QFET®	View
	SI2337DS-T1-E3	Vishay Siliconix, P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SQJ481EP-T1_GE3	Vishay Siliconix, P-Channel 80V 16A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SISH407DN-T1-GE3	Vishay Siliconix, P-Channel 20V 15.4A (Ta), 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	SSM6J505NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 12A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI	View

SI2301BDS-T1-GE3 - Tags

SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 PDF SI2301BDS-T1-GE3 datasheet SI2301BDS-T1-GE3 specification SI2301BDS-T1-GE3 image SI2301BDS-T1-GE3 India Renesas Electronics India SI2301BDS-T1-GE3 buy SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 price SI2301BDS-T1-GE3 distributor SI2301BDS-T1-GE3 supplier SI2301BDS-T1-GE3 wholesales