SI1480DH-T1-GE3
SI1480DH-T1-GE3
Part Number SI1480DH-T1-GE3 Description MOSFET N-CH 100V 2.6A SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 2.6A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363)
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SI1480DH-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1480DH Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 200mOhm @ 1.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 130pF @ 50V FET Feature - Power Dissipation (Max) 1.5W (Ta), 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SC-70-6 (SOT-363) Package / Case 6-TSSOP, SC-88, SOT-363
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