SI1926DL-T1-GE3

Part NumberSI1926DL-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 60V 0.37A SOT363

DatasheetSI1926DL

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6 (SOT-363)

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SI1926DL-T1-GE3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI1926DL

Standard Package

3000

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Part Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

370mA

Rds On (Max) @ Id, Vgs

1.4Ohm @ 340mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

18.5pF @ 30V

Power - Max

510mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6 (SOT-363)

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