Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

Part NumberSI2301BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.2A SOT23-3

DatasheetSI2301BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301BDS-T1-GE3.
We are offering SI2301BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 6V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301BDS-T1-GE3 - Related Products

	CSD23203WT	Texas Instruments, P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™	View
	SI3127DV-T1-GE3	Vishay Siliconix, P-Channel 60V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	AONS21357	Alpha & Omega Semiconductor Inc., P-Channel 30V 21A (Ta), 36A (Tc) 5W (Ta), 48W (Tc) Surface Mount 8-DFN-EP (5x6),	View
	AO4421	Alpha & Omega Semiconductor Inc., P-Channel 60V 6.2A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,	View
	DMP4047LFDE-7	Diodes Incorporated, P-Channel 40V 3.3A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	DMP2066UFDE-7	Diodes Incorporated, P-Channel 20V 6.2A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	IPD90P04P405ATMA1	Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	PMV27UPER	Nexperia USA Inc., P-Channel 20V 4.5A (Ta) 490mW (Ta), 4.15W (Tc) Surface Mount TO-236AB,	View
	DMP1022UFDF-7	Diodes Incorporated, P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),	View
	TSM150P04LCS RLG	Taiwan Semiconductor Corporation, P-Channel 40V 22A (Tc) 12.5W (Tc) Surface Mount 8-SOP,	View
	CMUDM8005 TR	Central Semiconductor Corp, P-Channel 20V 650mA (Ta) 300mW (Ta) Surface Mount SOT-523,	View
	SI3493BDV-T1-GE3	Vishay Siliconix, P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP, TrenchFET®	View

SI2301BDS-T1-GE3 - Tags

SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 PDF SI2301BDS-T1-GE3 datasheet SI2301BDS-T1-GE3 specification SI2301BDS-T1-GE3 image SI2301BDS-T1-GE3 India Renesas Electronics India SI2301BDS-T1-GE3 buy SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 price SI2301BDS-T1-GE3 distributor SI2301BDS-T1-GE3 supplier SI2301BDS-T1-GE3 wholesales