Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

SI2301BDS-T1-GE3

Part NumberSI2301BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.2A SOT23-3

DatasheetSI2301BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301BDS-T1-GE3.
We are offering SI2301BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	100mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	375pF @ 6V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301BDS-T1-GE3 - Related Products

	DMP10H400SEQ-13	Diodes Incorporated, P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223,	View
	FDME905PT	ON Semiconductor, P-Channel 12V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®	View
	SSM3J35AMFV,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII	View
	NTR3A052PZT1G	ON Semiconductor, P-Channel 20V 3.6A (Ta) 860mW (Ta) Surface Mount SOT-23 (TO-236AB),	View
	IXTN40P50P	IXYS, P-Channel 500V 40A (Tc) 890W (Tc) Chassis Mount SOT-227B, PolarP™	View
	IRFU5305PBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	SI7315DN-T1-GE3	Vishay Siliconix, P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	RW1C025ZPT2CR	Rohm Semiconductor, P-Channel 20V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
	FDS4465	ON Semiconductor, P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	DMP6180SK3Q-13	Diodes Incorporated, P-Channel 60V 14A (Tc) 2.7W (Ta) Surface Mount TO-252, (D-Pak), Automotive, AEC-Q101	View
	RZF020P01TL	Rohm Semiconductor, P-Channel 12V 2A (Ta) 800mW (Ta) Surface Mount TUMT3,	View
	SI4835DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SO, TrenchFET®	View

SI2301BDS-T1-GE3 - Tags

SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 PDF SI2301BDS-T1-GE3 datasheet SI2301BDS-T1-GE3 specification SI2301BDS-T1-GE3 image SI2301BDS-T1-GE3 India Renesas Electronics India SI2301BDS-T1-GE3 buy SI2301BDS-T1-GE3 SI2301BDS-T1-GE3 price SI2301BDS-T1-GE3 distributor SI2301BDS-T1-GE3 supplier SI2301BDS-T1-GE3 wholesales