Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-E3

SI2301CDS-T1-E3

SI2301CDS-T1-E3

Part NumberSI2301CDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-E3.
We are offering SI2301CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-E3 - Related Products

	SI3493DDV-T1-GE3	Vishay Siliconix, P-Channel 20V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	SQ2319ADS-T1_GE3	Vishay Siliconix, P-Channel 40V 4.6A (Tc) 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®	View
	FDN358P	ON Semiconductor, P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	SISS61DN-T1-GE3	Vishay Siliconix, P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S, TrenchFET® Gen III	View
	TSM9435CS RLG	Taiwan Semiconductor Corporation, P-Channel 30V 5.3A (Tc) 5.3W (Tc) Surface Mount 8-SOP,	View
	DMP2022LSS-13	Diodes Incorporated, P-Channel 20V 10A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	SI4483ADY-T1-GE3	Vishay Siliconix, P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO, TrenchFET®	View
	TSM9409CS RLG	Taiwan Semiconductor Corporation, P-Channel 60V 3.5A (Ta) 3W (Ta) Surface Mount 8-SOP,	View
	ZXMP6A13FQTA	Diodes Incorporated, P-Channel 60V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23,	View
	DMP2003UPS-13	Diodes Incorporated, P-Channel 20V 150A (Tc) 1.4W Surface Mount PowerDI5060-8,	View
	FQPF27P06	ON Semiconductor, P-Channel 60V 17A (Tc) 47W (Tc) Through Hole TO-220F, QFET®	View
	SQ2325ES-T1_GE3	Vishay Siliconix, P-Channel 150V 840mA (Tc) 3W (Tc) Surface Mount TO-236 (SOT-23), Automotive, AEC-Q101, TrenchFET®	View

SI2301CDS-T1-E3 - Tags

SI2301CDS-T1-E3 SI2301CDS-T1-E3 PDF SI2301CDS-T1-E3 datasheet SI2301CDS-T1-E3 specification SI2301CDS-T1-E3 image SI2301CDS-T1-E3 India Renesas Electronics India SI2301CDS-T1-E3 buy SI2301CDS-T1-E3 SI2301CDS-T1-E3 price SI2301CDS-T1-E3 distributor SI2301CDS-T1-E3 supplier SI2301CDS-T1-E3 wholesales