Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2306BDS-T1-E3

SI2306BDS-T1-E3

SI2306BDS-T1-E3

Part NumberSI2306BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 3.16A SOT23-3

DatasheetSi2306BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2306BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2306BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2306BDS-T1-E3.
We are offering SI2306BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2306BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2306BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 15V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2306BDS-T1-E3 - Related Products

	STF6N95K5	STMicroelectronics, N-Channel 950V 9A (Tc) 25W (Tc) Through Hole TO-220FP, SuperMESH5™	View
	SIHP30N60E-E3	Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-220AB,	View
	IXTT30N50L2	IXYS, N-Channel 500V 30A (Tc) 400W (Tc) Surface Mount TO-268, Linear L2™	View
	IPT111N20NFDATMA1	Infineon Technologies, N-Channel 200V 96A (Tc) 375W (Tc) Surface Mount PG-HSOF-8-1, OptiMOS™	View
	FDD5612	ON Semiconductor, N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3, PowerTrench®	View
	APT60N60BCSG	Microsemi Corporation, N-Channel 600V 60A (Tc) 431W (Tc) Through Hole TO-247 [B],	View
	IXFQ50N50P3	IXYS, N-Channel 500V 50A (Tc) 960W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View
	IRLR3915TRPBF	Infineon Technologies, N-Channel 55V 30A (Tc) 120W (Tc) Surface Mount D-Pak, HEXFET®	View
	NTHS5404T1G	ON Semiconductor, N-Channel 20V 5.2A (Ta) 1.3W (Ta) Surface Mount ChipFET™,	View
	APT39F60J	Microsemi Corporation, N-Channel 600V 42A (Tc) 480W (Tc) Chassis Mount ISOTOP®, POWER MOS 8™	View
	HUF75329D3ST	ON Semiconductor, N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA, UltraFET™	View
	FDD86369-F085	ON Semiconductor, N-Channel 80V 90A (Tc) 150W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View

SI2306BDS-T1-E3 - Tags

SI2306BDS-T1-E3 SI2306BDS-T1-E3 PDF SI2306BDS-T1-E3 datasheet SI2306BDS-T1-E3 specification SI2306BDS-T1-E3 image SI2306BDS-T1-E3 India Renesas Electronics India SI2306BDS-T1-E3 buy SI2306BDS-T1-E3 SI2306BDS-T1-E3 price SI2306BDS-T1-E3 distributor SI2306BDS-T1-E3 supplier SI2306BDS-T1-E3 wholesales