Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2306BDS-T1-E3

SI2306BDS-T1-E3

SI2306BDS-T1-E3

Part NumberSI2306BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 3.16A SOT23-3

DatasheetSi2306BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2306BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2306BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2306BDS-T1-E3.
We are offering SI2306BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2306BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2306BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 15V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2306BDS-T1-E3 - Related Products

	IPD80R2K4P7ATMA1	Infineon Technologies, N-Channel 800V 2.5A (Tc) 22W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	IRLZ44SPBF	Vishay Siliconix, N-Channel 60V 50A (Tc) 3.7W (Ta), 150W (Tc) Surface Mount D2PAK,	View
	IRF1010ZPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	TK100A10N1,S4X	Toshiba Semiconductor and Storage, N-Channel 100V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	STP150NF04	STMicroelectronics, N-Channel 40V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II	View
	FDB9403-F085	ON Semiconductor, N-Channel 40V 110A (Tc) 333W (Tj) Surface Mount TO-263AB, Automotive, AEC-Q101, PowerTrench®	View
	FDS6682	ON Semiconductor, N-Channel 30V 14A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	AO4752	Alpha & Omega Semiconductor Inc., N-Channel 30V 15A (Ta) 3.1W (Ta) Surface Mount 8-SOIC, AlphaMOS	View
	PSMN0R9-30YLDX	Nexperia USA Inc., N-Channel 30V 300A 291W Surface Mount LFPAK56, Power-SO8,	View
	IRFS3006TRLPBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
	IPB014N06NATMA1	Infineon Technologies, N-Channel 60V 34A (Ta), 180A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	FQD20N06TM	ON Semiconductor, N-Channel 60V 16.8A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak, QFET®	View

SI2306BDS-T1-E3 - Tags

SI2306BDS-T1-E3 SI2306BDS-T1-E3 PDF SI2306BDS-T1-E3 datasheet SI2306BDS-T1-E3 specification SI2306BDS-T1-E3 image SI2306BDS-T1-E3 India Renesas Electronics India SI2306BDS-T1-E3 buy SI2306BDS-T1-E3 SI2306BDS-T1-E3 price SI2306BDS-T1-E3 distributor SI2306BDS-T1-E3 supplier SI2306BDS-T1-E3 wholesales