Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2307BDS-T1-GE3

SI2307BDS-T1-GE3

SI2307BDS-T1-GE3

Part NumberSI2307BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 2.5A SOT23-3

DatasheetSI2307BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2307BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2307BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2307BDS-T1-GE3.
We are offering SI2307BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2307BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2307BDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	78mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	380pF @ 15V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2307BDS-T1-GE3 - Related Products

	TSM085P03CV RGG	Taiwan Semiconductor Corporation, P-Channel 30V 64A (Tc) 50W (Tc) Surface Mount 8-PDFN (3x3),	View
	FDD9507L-F085	ON Semiconductor, P-Channel 40V 100A (Tc) 227W (Ta) Surface Mount D-PAK (TO-252), PowerTrench®	View
	RSS070P05FRATB	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	CSD22204WT	Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA, NexFET™	View
	DMP4047SK3-13	Diodes Incorporated, P-Channel 40V 20A (Tc) 1.6W (Ta) Surface Mount TO-252,	View
	SI6423DQ-T1-GE3	Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View
	RV2C001ZPT2L	Rohm Semiconductor, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006),	View
	AO3419	Alpha & Omega Semiconductor Inc., P-Channel 20V 3.5A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View
	SQ3427EV-T1_GE3	Vishay Siliconix, P-Channel 60V 5.3A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	RQ3C150BCTB	Rohm Semiconductor, P-Channel 20V 30A (Tc) 20W (Tc) Surface Mount 8-HSMT (3.2x3),	View
	SSM3J327R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI7625DN-T1-GE3	Vishay Siliconix, P-Channel 30V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View

SI2307BDS-T1-GE3 - Tags

SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 PDF SI2307BDS-T1-GE3 datasheet SI2307BDS-T1-GE3 specification SI2307BDS-T1-GE3 image SI2307BDS-T1-GE3 India Renesas Electronics India SI2307BDS-T1-GE3 buy SI2307BDS-T1-GE3 SI2307BDS-T1-GE3 price SI2307BDS-T1-GE3 distributor SI2307BDS-T1-GE3 supplier SI2307BDS-T1-GE3 wholesales