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SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

Part NumberSI2312BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 3.9A SOT23-3

DatasheetSi2312BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

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SI2312BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2312BDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

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SI2312BDS-T1-GE3 - Tags

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