Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS108DN-T1-GE3

SIS108DN-T1-GE3

SIS108DN-T1-GE3

Part NumberSIS108DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V PPAK 1212-8

DatasheetSIS108DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 6.7A (Ta), 16A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS108DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS108DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS108DN-T1-GE3.
We are offering SIS108DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS108DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS108DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.2W (Ta), 24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS108DN-T1-GE3 - Related Products

	SIRC06DP-T1-GE3	Vishay Siliconix, N-Channel 30V 32A (Ta), 60A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	BUK964R8-60E,118	Nexperia USA Inc., N-Channel 60V 100A (Tc) 234W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	IRFB3006PBF	Infineon Technologies, N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB, HEXFET®	View
	TSM320N03CX RFG	Taiwan Semiconductor Corporation, N-Channel 30V 5.5A (Tc) 1.8W (Tc) Surface Mount SOT-23,	View
	PSMN1R0-30YLC,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 272W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	2N7002T-7-F	Diodes Incorporated, N-Channel 60V 115mA (Ta) 150mW (Ta) Surface Mount SOT-523,	View
	IRF1404ZSTRLPBF	Infineon Technologies, N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®	View
	IPB110N20N3LFATMA1	Infineon Technologies, N-Channel 200V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3, OptiMOS™ 3	View
	BSS123NH6433XTMA1	Infineon Technologies, N-Channel 100V 190mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™	View
	RSQ045N03TR	Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),	View
	STD5N95K3	STMicroelectronics, N-Channel 950V 4A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH3™	View
	STD7N80K5	STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK, SuperMESH5™	View

SIS108DN-T1-GE3 - Tags

SIS108DN-T1-GE3 SIS108DN-T1-GE3 PDF SIS108DN-T1-GE3 datasheet SIS108DN-T1-GE3 specification SIS108DN-T1-GE3 image SIS108DN-T1-GE3 India Renesas Electronics India SIS108DN-T1-GE3 buy SIS108DN-T1-GE3 SIS108DN-T1-GE3 price SIS108DN-T1-GE3 distributor SIS108DN-T1-GE3 supplier SIS108DN-T1-GE3 wholesales