SI2315BDS-T1-GE3
SI2315BDS-T1-GE3
Part Number SI2315BDS-T1-GE3
Description MOSFET P-CH 12V 3A SOT23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 12V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2315BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2315BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2315BDS-T1-GE3.
We are offering SI2315BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2315BDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2315BDS
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.85A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 715pF @ 6V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SI2315BDS-T1-GE3 - Related ProductsMore >>
NTR2101PT1G
ON Semiconductor, P-Channel 8V 960mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SI4435FDY-T1-GE3
Vishay Siliconix, P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC, TrenchFET® Gen III
View
SISH615ADN-T1-GE3
Vishay Siliconix, P-Channel 20V 22.1A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET® Gen III
View
FJ4B01100L1
Panasonic Electronic Components, P-Channel 12V 2.2A (Ta) 360mW (Ta) Surface Mount XLGA004-W-0808-RA01,
View
IRFU9214PBF
Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Through Hole TO-251AA,
View
FDS6679AZ
ON Semiconductor, P-Channel 30V 13A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI5471DC-T1-GE3
Vishay Siliconix, P-Channel 20V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®
View
CSD22206WT
Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5), NexFET™
View
MIC94052YC6-TR
Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,
View
IXTH76P10T
IXYS, P-Channel 100V 76A (Tc) 298W (Tc) Through Hole TO-247 (IXTH), TrenchP™
View
SI6423DQ-T1-GE3
Vishay Siliconix, P-Channel 12V 8.2A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP, TrenchFET®
View
DMP3007SFG-7
Diodes Incorporated, P-Channel 30V 70A (Tc) 2.8W (Ta) Surface Mount PowerDI3333-8,
View
SI2315BDS-T1-GE3 - Tags