Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2318DS-T1-GE3

SI2318DS-T1-GE3

SI2318DS-T1-GE3

Part NumberSI2318DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 3A SOT-23

DatasheetSI2318DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2318DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2318DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2318DS-T1-GE3.
We are offering SI2318DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2318DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2318DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	45mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 20V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2318DS-T1-GE3 - Related Products

	BSZ097N04LSGATMA1	Infineon Technologies, N-Channel 40V 12A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	NDB5060L	ON Semiconductor, N-Channel 60V 26A (Tc) 68W (Tc) Surface Mount D²PAK (TO-263AB),	View
	PSMN2R0-30BL,118	Nexperia USA Inc., N-Channel 30V 100A (Tc) 211W (Tc) Surface Mount D2PAK,	View
	HAT2160H-EL-E	Renesas Electronics America, N-Channel 20V 60A (Ta) 30W (Tc) Surface Mount LFPAK,	View
	NTD4804NT4G	ON Semiconductor, N-Channel 30V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 107W (Tc) Surface Mount DPAK,	View
	IRFS7730TRLPBF	Infineon Technologies, N-Channel 75V 195A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™	View
	BSC018N04LSGATMA1	Infineon Technologies, N-Channel 40V 30A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IXFK55N50F	IXYS-RF, N-Channel 500V 55A (Tc) 560W (Tc) Through Hole TO-264 (IXFK), HiPerRF™	View
	SUD50N03-06AP-E3	Vishay Siliconix, N-Channel 30V 90A (Tc) 10W (Ta), 83W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	FDMS86252	ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	FDP5N50NZ	ON Semiconductor, N-Channel 500V 4.5A (Tc) 78W (Tc) Through Hole TO-220-3, UniFET-II™	View
	IXTX1R4N450HV	IXYS, N-Channel 4500V 1.4A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV,	View

SI2318DS-T1-GE3 - Tags

SI2318DS-T1-GE3 SI2318DS-T1-GE3 PDF SI2318DS-T1-GE3 datasheet SI2318DS-T1-GE3 specification SI2318DS-T1-GE3 image SI2318DS-T1-GE3 India Renesas Electronics India SI2318DS-T1-GE3 buy SI2318DS-T1-GE3 SI2318DS-T1-GE3 price SI2318DS-T1-GE3 distributor SI2318DS-T1-GE3 supplier SI2318DS-T1-GE3 wholesales