Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2319DDS-T1-GE3

SI2319DDS-T1-GE3

SI2319DDS-T1-GE3

Part NumberSI2319DDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 40V

DatasheetSI2319DDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 40V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2319DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2319DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2319DDS-T1-GE3.
We are offering SI2319DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2319DDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2319DDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	75mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	650pF @ 20V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2319DDS-T1-GE3 - Related Products

	SI3437DV-T1-E3	Vishay Siliconix, P-Channel 150V 1.4A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	DMG2307L-7	Diodes Incorporated, P-Channel 30V 2.5A (Ta) 760mW (Ta) Surface Mount SOT-23,	View
	IRFP9140PBF	Vishay Siliconix, P-Channel 100V 21A (Tc) 180W (Tc) Through Hole TO-247-3,	View
	BSS84-7-F	Diodes Incorporated, P-Channel 50V 130mA (Ta) 300mW (Ta) Surface Mount SOT-23-3,	View
	MCH6342-TL-W	ON Semiconductor, P-Channel 30V 4.5A (Ta) 1.5W (Ta) Surface Mount SC-88FL/MCPH6,	View
	SQ3481EV-T1_GE3	Vishay Siliconix, P-Channel 30V 7.5A (Tc) 4W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	RZF030P01TL	Rohm Semiconductor, P-Channel 12V 3A (Ta) 800mW (Ta) Surface Mount TUMT3,	View
	NVMFS5A140PLZWFT1G	ON Semiconductor, P-Channel 40V 20A (Ta), 140A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View
	FDN304PZ	ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	DMP6250SE-13	Diodes Incorporated, P-Channel 60V 2.1A (Ta) 1.8W (Ta), 14W (Tc) Surface Mount SOT-223,	View
	CSD25211W1015	Texas Instruments, P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5), NexFET™	View
	SIA431DJ-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View

SI2319DDS-T1-GE3 - Tags

SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 PDF SI2319DDS-T1-GE3 datasheet SI2319DDS-T1-GE3 specification SI2319DDS-T1-GE3 image SI2319DDS-T1-GE3 India Renesas Electronics India SI2319DDS-T1-GE3 buy SI2319DDS-T1-GE3 SI2319DDS-T1-GE3 price SI2319DDS-T1-GE3 distributor SI2319DDS-T1-GE3 supplier SI2319DDS-T1-GE3 wholesales