Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

SI4459BDY-T1-GE3

Part NumberSI4459BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V SO-8

DatasheetSI4459BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4459BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4459BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4459BDY-T1-GE3.
We are offering SI4459BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4459BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4459BDY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	20.5A (Ta), 27.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	84nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3490pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.1W (Ta), 5.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4459BDY-T1-GE3 - Related Products

	SQJ411EP-T1_GE3	Vishay Siliconix, P-Channel 12V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	NTS4173PT1G	ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	BSS84PWH6327XTSA1	Infineon Technologies, P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount PG-SOT323-3, SIPMOS®	View
	BSH203,215	Nexperia USA Inc., P-Channel 30V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	FDC654P	ON Semiconductor, P-Channel 30V 3.6A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	SI3139KL-TP	Micro Commercial Co, P-Channel 20V 680mA 100mW Surface Mount SOT-883,	View
	SIS443DN-T1-GE3	Vishay Siliconix, P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	PMV65XP,215	Nexperia USA Inc., P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB,	View
	SSM3J36FS,LF	Toshiba Semiconductor and Storage, P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSIII	View
	NTK3139PT5G	ON Semiconductor, P-Channel 20V 660mA (Ta) 310mW (Ta) Surface Mount SOT-723,	View
	SI2309CDS-T1-GE3	Vishay Siliconix, P-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMP3098LQ-7	Diodes Incorporated, P-Channel 30V 3.8A (Ta) 1.08W (Ta) Surface Mount SOT-23-3, Automotive, AEC-Q101	View

SI4459BDY-T1-GE3 - Tags

SI4459BDY-T1-GE3 SI4459BDY-T1-GE3 PDF SI4459BDY-T1-GE3 datasheet SI4459BDY-T1-GE3 specification SI4459BDY-T1-GE3 image SI4459BDY-T1-GE3 India Renesas Electronics India SI4459BDY-T1-GE3 buy SI4459BDY-T1-GE3 SI4459BDY-T1-GE3 price SI4459BDY-T1-GE3 distributor SI4459BDY-T1-GE3 supplier SI4459BDY-T1-GE3 wholesales