SI4459BDY-T1-GE3


SI4459BDY-T1-GE3

Part NumberSI4459BDY-T1-GE3

Manufacturer

Description

Datasheet

Package / Case8-SOIC (0.154", 3.90mm Width)

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Lead TimeTo be Confirmed

Detailed Description

SI4459BDY-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package2500
ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
PackagingTape & Reel (TR)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C20.5A (Ta), 27.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs84nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds3490pF @ 15V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 5.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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SI4459BDY-T1-GE3 - Tags

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