SI2328DS-T1-E3
SI2328DS-T1-E3
Part Number SI2328DS-T1-E3 Description MOSFET N-CH 100V 1.15A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2328DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2328DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2328DS-T1-E3.
We are offering SI2328DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2328DS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2328DS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.15A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 250mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 730mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2328DS-T1-E3 - Related ProductsMore >>
IRLL2705TRPBF Infineon Technologies, N-Channel 55V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
FDP39N20 ON Semiconductor, N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3, UniFET™
View
IPDD60R125G7XTMA1 Infineon Technologies, N-Channel 600V 20A (Tc) 120W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7
View
DMN4800LSS-13 Diodes Incorporated, N-Channel 30V 9A (Ta) 1.46W (Ta) Surface Mount 8-SOP,
View
SI4894BDY-T1-E3 Vishay Siliconix, N-Channel 30V 8.9A (Ta) 1.4W (Ta) Surface Mount 8-SO, TrenchFET®
View
TK34E10N1,S1X Toshiba Semiconductor and Storage, N-Channel 100V 75A (Tc) 103W (Tc) Through Hole TO-220, U-MOSVIII-H
View
IRF2907ZPBF Infineon Technologies, N-Channel 75V 160A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
View
STP19NM50N STMicroelectronics, N-Channel 500V 14A (Tc) 110W (Tc) Through Hole TO-220AB, MDmesh™ II
View
FCP260N60E ON Semiconductor, N-Channel 600V 15A (Tc) 156W (Tc) Through Hole TO-220-3, SuperFET® II
View
STI6N90K5 STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Through Hole I2PAK, MDmesh™ K5
View
APT51M50J Microsemi Corporation, N-Channel 500V 51A (Tc) 480W (Tc) Chassis Mount ISOTOP®,
View
AOT14N50 Alpha & Omega Semiconductor Inc., N-Channel 500V 14A (Tc) 278W (Tc) Through Hole TO-220,
View
SI2328DS-T1-E3 - Tags
English
