Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2333DS-T1-GE3

SI2333DS-T1-GE3

SI2333DS-T1-GE3

Part NumberSI2333DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 4.1A SOT23-3

DatasheetSI2333DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 4.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2333DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2333DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2333DS-T1-GE3.
We are offering SI2333DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2333DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2333DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 6V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2333DS-T1-GE3 - Related Products

	ZXM61P02FTA	Diodes Incorporated, P-Channel 20V 900mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	SUP90P06-09L-E3	Vishay Siliconix, P-Channel 60V 90A (Tc) 2.4W (Ta), 250W (Tc) Through Hole TO-220AB, TrenchFET®	View
	SSM3J377R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SQD50P03-07_GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 136W (Tc) Surface Mount TO-252AA,	View
	RD3H160SPFRATL	Rohm Semiconductor, P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	SQD50P06-15L_GE3	Vishay Siliconix, P-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IRF6215STRLPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK, HEXFET®	View
	CSD22204WT	Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA, NexFET™	View
	SI3457CDV-T1-GE3	Vishay Siliconix, P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	TP0606N3-G	Microchip Technology, P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	SQD40131EL_GE3	Vishay Siliconix, P-Channel 40V 50A (Tc) 62W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	IXTR48P20P	IXYS, P-Channel 200V 30A (Tc) 190W (Tc) Through Hole ISOPLUS247™, PolarP™	View

SI2333DS-T1-GE3 - Tags

SI2333DS-T1-GE3 SI2333DS-T1-GE3 PDF SI2333DS-T1-GE3 datasheet SI2333DS-T1-GE3 specification SI2333DS-T1-GE3 image SI2333DS-T1-GE3 India Renesas Electronics India SI2333DS-T1-GE3 buy SI2333DS-T1-GE3 SI2333DS-T1-GE3 price SI2333DS-T1-GE3 distributor SI2333DS-T1-GE3 supplier SI2333DS-T1-GE3 wholesales