Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2337DS-T1-E3

SI2337DS-T1-E3

SI2337DS-T1-E3

Part NumberSI2337DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 80V 2.2A SOT23-3

DatasheetSI2337DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2337DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2337DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2337DS-T1-E3.
We are offering SI2337DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2337DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2337DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 40V
FET Feature	-
Power Dissipation (Max)	760mW (Ta), 2.5W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2337DS-T1-E3 - Related Products

	ZXMP6A17GQTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	SSM6J213FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 20V 2.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View
	SI7149DP-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SI2301CDS-T1-E3	Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	FDV302P	ON Semiconductor, P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	IRF9Z34NSTRLPBF	Infineon Technologies, P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK, HEXFET®	View
	SI1013R-T1-GE3	Vishay Siliconix, P-Channel 20V 350mA (Ta) 150mW (Ta) Surface Mount SC-75A, TrenchFET®	View
	IRF9540NLPBF	Infineon Technologies, P-Channel 100V 23A (Tc) 3.1W (Ta), 110W (Tc) Through Hole TO-262, HEXFET®	View
	SISH625DN-T1-GE3	Vishay Siliconix, P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	NDT456P	ON Semiconductor, P-Channel 30V 7.5A (Ta) 3W (Ta) Surface Mount SOT-223-4,	View
	SI2301-TP	Micro Commercial Co, P-Channel 20V 2.8A (Ta) 1.25W (Ta) Surface Mount SOT-23,	View
	SQS411ENW-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 53.6W (Tc) Surface Mount PowerPAK® 1212-8W, Automotive, AEC-Q101, TrenchFET®	View

SI2337DS-T1-E3 - Tags

SI2337DS-T1-E3 SI2337DS-T1-E3 PDF SI2337DS-T1-E3 datasheet SI2337DS-T1-E3 specification SI2337DS-T1-E3 image SI2337DS-T1-E3 India Renesas Electronics India SI2337DS-T1-E3 buy SI2337DS-T1-E3 SI2337DS-T1-E3 price SI2337DS-T1-E3 distributor SI2337DS-T1-E3 supplier SI2337DS-T1-E3 wholesales