Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2337DS-T1-E3

SI2337DS-T1-E3

SI2337DS-T1-E3

Part NumberSI2337DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 80V 2.2A SOT23-3

DatasheetSI2337DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2337DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2337DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2337DS-T1-E3.
We are offering SI2337DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2337DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2337DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 40V
FET Feature	-
Power Dissipation (Max)	760mW (Ta), 2.5W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2337DS-T1-E3 - Related Products

	NTS4173PT1G	ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	IRLIB9343PBF	Infineon Technologies, P-Channel 55V 14A (Tc) 33W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	BSC030P03NS3GAUMA1	Infineon Technologies, P-Channel 30V 25.4A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SQJ411EP-T1_GE3	Vishay Siliconix, P-Channel 12V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	IRF9Z34PBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB,	View
	NVTFS5116PLTAG	ON Semiconductor, P-Channel 60V 6A (Ta) 3.2W (Ta), 21W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SSM3J327R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	DMG2301L-7	Diodes Incorporated, P-Channel 20V 3A (Ta) 1.5W (Ta) Surface Mount SOT-23,	View
	IRFR9120PBF	Vishay Siliconix, P-Channel 100V 5.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	FQP27P06	ON Semiconductor, P-Channel 60V 27A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®	View
	SUD09P10-195-GE3	Vishay Siliconix, P-Channel 100V 8.8A (Tc) 2.5W (Ta), 32.1W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	SQ4425EY-T1_GE3	Vishay Siliconix, P-Channel 30V 18A (Tc) 6.8W (Tc) Surface Mount 8-SOIC, Automotive, AEC-Q101, TrenchFET®	View

SI2337DS-T1-E3 - Tags

SI2337DS-T1-E3 SI2337DS-T1-E3 PDF SI2337DS-T1-E3 datasheet SI2337DS-T1-E3 specification SI2337DS-T1-E3 image SI2337DS-T1-E3 India Renesas Electronics India SI2337DS-T1-E3 buy SI2337DS-T1-E3 SI2337DS-T1-E3 price SI2337DS-T1-E3 distributor SI2337DS-T1-E3 supplier SI2337DS-T1-E3 wholesales