SQD40P10-40L_GE3
SQD40P10-40L_GE3
Part Number SQD40P10-40L_GE3
Description MOSFET P-CHAN 100V TO252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 38A (Tc) 136W (Tc) Surface Mount TO-252AA
To learn about the specification of SQD40P10-40L_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQD40P10-40L_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQD40P10-40L_GE3.
We are offering SQD40P10-40L_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQD40P10-40L_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQD40P10-40L
Standard Package 1
Manufacturer Vishay Siliconix
Series Automotive, AEC-Q101, TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 144nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5540pF @ 15V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQD40P10-40L_GE3 - Related ProductsMore >>
IRF4905PBF
Infineon Technologies, P-Channel 55V 74A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®
View
DMP2123L-7
Diodes Incorporated, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,
View
SIS413DN-T1-GE3
Vishay Siliconix, P-Channel 30V 18A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
FDFM2P110
ON Semiconductor, P-Channel 20V 3.5A (Ta) 2W (Ta) Surface Mount MicroFET 3x3mm, PowerTrench®
View
2SJ305TE85LF
Toshiba Semiconductor and Storage, P-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,
View
IRF9610PBF
Vishay Siliconix, P-Channel 200V 1.8A (Tc) 20W (Tc) Through Hole TO-220AB,
View
SI4413ADY-T1-E3
Vishay Siliconix, P-Channel 30V 10.5A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
2SJ168TE85LF
Toshiba Semiconductor and Storage, P-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,
View
CPH6341-TL-W
ON Semiconductor, P-Channel 30V 5A (Ta) 1.6W (Ta) Surface Mount 6-CPH,
View
ZXMP6A18KTC
Diodes Incorporated, P-Channel 60V 6.8A (Ta) 2.15W (Ta) Surface Mount TO-252-3,
View
SI4401BDY-T1-GE3
Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
TP2540N8-G
Microchip Technology, P-Channel 400V 125mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
SQD40P10-40L_GE3 - Tags