SI2337DS-T1-GE3
SI2337DS-T1-GE3
Part Number SI2337DS-T1-GE3 Description MOSFET P-CH 80V 2.2A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2337DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2337DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2337DS-T1-GE3.
We are offering SI2337DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2337DS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2337DS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 270mOhm @ 1.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 40V FET Feature - Power Dissipation (Max) 760mW (Ta), 2.5W (Tc) Operating Temperature -50°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2337DS-T1-GE3 - Related ProductsMore >>
ATP302-TL-H ON Semiconductor, P-Channel 60V 70A (Ta) 70W (Tc) Surface Mount ATPAK,
View
SQJ463EP-T1_GE3 Vishay Siliconix, P-Channel 40V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
FQP17P06 ON Semiconductor, P-Channel 60V 17A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®
View
NVTR4502PT1G ON Semiconductor, P-Channel 30V 1.13A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
ZXMP10A13FTA Diodes Incorporated, P-Channel 100V 600mA (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
CSD25483F4T Texas Instruments, P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
STD46P4LLF6 STMicroelectronics, P-Channel 40V 46A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ F6
View
SSM3J325F,LF Toshiba Semiconductor and Storage, P-Channel 20V 2A (Ta) 600mW (Ta) Surface Mount S-Mini, U-MOSVI
View
MCH3376-TL-W ON Semiconductor, P-Channel 20V 1.5A (Ta) 800mW (Ta) Surface Mount 3-MCPH,
View
RQ3C150BCTB Rohm Semiconductor, P-Channel 20V 30A (Tc) 20W (Tc) Surface Mount 8-HSMT (3.2x3),
View
SI4835DDY-T1-GE3 Vishay Siliconix, P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SO, TrenchFET®
View
ZXMP7A17KTC Diodes Incorporated, P-Channel 70V 3.8A (Ta) 2.11W (Ta) Surface Mount TO-252-3,
View
SI2337DS-T1-GE3 - Tags
English
