SI2343CDS-T1-GE3
SI2343CDS-T1-GE3
Part Number SI2343CDS-T1-GE3
Description MOSFET P-CH 30V 5.9A SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2343CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2343CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2343CDS-T1-GE3.
We are offering SI2343CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2343CDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2343CDS
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
SI2343CDS-T1-GE3 - Related ProductsMore >>
TPS1100PWR
Texas Instruments, P-Channel 15V 1.27A (Ta) 504mW (Ta) Surface Mount 8-TSSOP,
View
ZXMP6A17GTA
Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,
View
SI3429EDV-T1-GE3
Vishay Siliconix, P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
FDMA291P
ON Semiconductor, P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
CSD25213W10
Texas Instruments, P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™
View
NTF2955T1G
ON Semiconductor, P-Channel 60V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223,
View
SSM6J215FE(TE85L,F
Toshiba Semiconductor and Storage, P-Channel 20V 3.4A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI
View
BSO301SPHXUMA1
Infineon Technologies, P-Channel 30V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8, OptiMOS™
View
SI7489DP-T1-GE3
Vishay Siliconix, P-Channel 100V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FDWS9510L-F085
ON Semiconductor, P-Channel 40V 50A (Tc) 75W (Tj) Surface Mount 8-DFN (5.1x6.3), PowerTrench®
View
SI1403BDL-T1-E3
Vishay Siliconix, P-Channel 20V 1.4A (Ta) 568mW (Ta) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
AO4449
Alpha & Omega Semiconductor Inc., P-Channel 30V 7A (Ta) 3.1W (Ta) Surface Mount 8-SOIC,
View
SI2343CDS-T1-GE3 - Tags