Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2347DS-T1-GE3

SI2347DS-T1-GE3

SI2347DS-T1-GE3

Part NumberSI2347DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 5A SOT-23

DatasheetSI2347DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 5A (Tc) 1.7W (Tc) Surface Mount SOT-23-3

To learn about the specification of SI2347DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2347DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2347DS-T1-GE3.
We are offering SI2347DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2347DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2347DS-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	705pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2347DS-T1-GE3 - Related Products

	IRF9530NPBF	Infineon Technologies, P-Channel 100V 14A (Tc) 79W (Tc) Through Hole TO-220AB, HEXFET®	View
	CSD25304W1015	Texas Instruments, P-Channel 20V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™	View
	IRF9317TRPBF	Infineon Technologies, P-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
	BSZ086P03NS3GATMA1	Infineon Technologies, P-Channel 30V 13.5A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	SI3443DDV-T1-GE3	Vishay Siliconix, P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	DMP4047SK3-13	Diodes Incorporated, P-Channel 40V 20A (Tc) 1.6W (Ta) Surface Mount TO-252,	View
	RAL025P01TCR	Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 320mW (Ta) Surface Mount TUMT6,	View
	PCP1302-TD-H	ON Semiconductor, P-Channel 60V 3A (Ta) 3.5W (Tc) Surface Mount SOT-89/PCP-1,	View
	SI7139DP-T1-GE3	Vishay Siliconix, P-Channel 30V 40A (Tc) 5W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	FDS4465	ON Semiconductor, P-Channel 20V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	SPD30P06PGBTMA1	Infineon Technologies, P-Channel 60V 30A (Tc) 125W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	SQS423EN-T1_GE3	Vishay Siliconix, P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View

SI2347DS-T1-GE3 - Tags

SI2347DS-T1-GE3 SI2347DS-T1-GE3 PDF SI2347DS-T1-GE3 datasheet SI2347DS-T1-GE3 specification SI2347DS-T1-GE3 image SI2347DS-T1-GE3 India Renesas Electronics India SI2347DS-T1-GE3 buy SI2347DS-T1-GE3 SI2347DS-T1-GE3 price SI2347DS-T1-GE3 distributor SI2347DS-T1-GE3 supplier SI2347DS-T1-GE3 wholesales