Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2369DS-T1-GE3

SI2369DS-T1-GE3

SI2369DS-T1-GE3

Part NumberSI2369DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 7.6A TO-236

DatasheetSI2369DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236

To learn about the specification of SI2369DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2369DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2369DS-T1-GE3.
We are offering SI2369DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2369DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2369DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1295pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2369DS-T1-GE3 - Related Products

	SI7431DP-T1-GE3	Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	PMXB350UPEZ	Nexperia USA Inc., P-Channel 20V 1.2A (Ta) 360mW (Ta), 5.68W (Tc) Surface Mount DFN1010D-3,	View
	NTJS4151PT1G	ON Semiconductor, P-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SC-88/SC70-6/SOT-363,	View
	SI2333CDS-T1-GE3	Vishay Siliconix, P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI3469DV-T1-GE3	Vishay Siliconix, P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®	View
	SQM50P06-15L_GE3	Vishay Siliconix, P-Channel 60V 50A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	MTM231232LBF	Panasonic Electronic Components, P-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SMini3-G1-B,	View
	SI4491EDY-T1-GE3	Vishay Siliconix, P-Channel 30V 17.3A (Ta) 3.1W (Ta), 6.9W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI2305-TP	Micro Commercial Co, P-Channel 8V 4.1A (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	RT1E040RPTR	Rohm Semiconductor, P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-TSST,	View
	RTL020P02FRATR	Rohm Semiconductor, P-Channel 20V 2A (Ta) 1W (Ta) Surface Mount TUMT6, Automotive, AEC-Q101	View
	BUK6Y32-60PX	Nexperia USA Inc., P-Channel 60V 40A (Ta) 106W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View

SI2369DS-T1-GE3 - Tags

SI2369DS-T1-GE3 SI2369DS-T1-GE3 PDF SI2369DS-T1-GE3 datasheet SI2369DS-T1-GE3 specification SI2369DS-T1-GE3 image SI2369DS-T1-GE3 India Renesas Electronics India SI2369DS-T1-GE3 buy SI2369DS-T1-GE3 SI2369DS-T1-GE3 price SI2369DS-T1-GE3 distributor SI2369DS-T1-GE3 supplier SI2369DS-T1-GE3 wholesales