Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2369DS-T1-GE3

SI2369DS-T1-GE3

SI2369DS-T1-GE3

Part NumberSI2369DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 7.6A TO-236

DatasheetSI2369DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236

To learn about the specification of SI2369DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2369DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2369DS-T1-GE3.
We are offering SI2369DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2369DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2369DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1295pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2369DS-T1-GE3 - Related Products

	ZVP2106A	Diodes Incorporated, P-Channel 60V 280mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	IRFR5305TRPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	SI7309DN-T1-GE3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SPD30P06PGBTMA1	Infineon Technologies, P-Channel 60V 30A (Tc) 125W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	IRFR5305TRLPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	PMV250EPEAR	Nexperia USA Inc., P-Channel 40V 1.5A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB,	View
	NTGS5120PT1G	ON Semiconductor, P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP,	View
	DMP3050LSS-13	Diodes Incorporated, P-Channel 30V 4.8A (Ta) 1.7W (Ta) Surface Mount 8-SO,	View
	SI7423DN-T1-E3	Vishay Siliconix, P-Channel 30V 7.4A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	AON6407	Alpha & Omega Semiconductor Inc., P-Channel 30V 32A (Ta), 85A (Tc) 7.3W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6),	View
	FDS4675-F085	ON Semiconductor, P-Channel 40V 11A (Ta) 2.4W (Ta) Surface Mount 8-SOIC, Automotive, AEC-Q101, PowerTrench®	View
	NVF6P02T3G	ON Semiconductor, P-Channel 20V 10A (Ta) 8.3W (Ta) Surface Mount SOT-223 (TO-261), Automotive, AEC-Q101	View

SI2369DS-T1-GE3 - Tags

SI2369DS-T1-GE3 SI2369DS-T1-GE3 PDF SI2369DS-T1-GE3 datasheet SI2369DS-T1-GE3 specification SI2369DS-T1-GE3 image SI2369DS-T1-GE3 India Renesas Electronics India SI2369DS-T1-GE3 buy SI2369DS-T1-GE3 SI2369DS-T1-GE3 price SI2369DS-T1-GE3 distributor SI2369DS-T1-GE3 supplier SI2369DS-T1-GE3 wholesales