Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2356DS-T1-GE3

SI2356DS-T1-GE3

SI2356DS-T1-GE3

Part NumberSI2356DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 4.3A SOT-23

DatasheetSI2356DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236

To learn about the specification of SI2356DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2356DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2356DS-T1-GE3.
We are offering SI2356DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2356DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2356DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	51mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 20V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2356DS-T1-GE3 - Related Products

	APT37M100B2	Microsemi Corporation, N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2],	View
	IXFN80N50P	IXYS, N-Channel 500V 66A (Tc) 700W (Tc) Chassis Mount SOT-227B, PolarHV™	View
	FDB28N30TM	ON Semiconductor, N-Channel 300V 28A (Tc) 250W (Tc) Surface Mount D²PAK, UniFET™	View
	IRF60B217	Infineon Technologies, N-Channel 60V 60A (Tc) 83W (Tc) Through Hole TO-220AB, StrongIRFET™	View
	SPD06N80C3ATMA1	Infineon Technologies, N-Channel 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™	View
	PSMN027-100PS,127	Nexperia USA Inc., N-Channel 100V 37A (Tc) 103W (Tc) Through Hole TO-220AB,	View
	STB75NF20	STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Surface Mount D2PAK, STripFET™	View
	BSZ042N06NSATMA1	Infineon Technologies, N-Channel 60V 17A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	DN2535N3-G	Microchip Technology, N-Channel 350V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226),	View
	AOB66916L	Alpha & Omega Semiconductor Inc., N-Channel 100V 35.5A (Ta), 120A (Tc) 8.3W (Ta), 277W (Tc) Surface Mount TO-263 (D2Pak), AlphaSGT™	View
	IXTT1N450HV	IXYS, N-Channel 4500V 1A (Tc) 520W (Tc) Surface Mount TO-268,	View
	SIR112DP-T1-RE3	Vishay Siliconix, N-Channel 40V 37.6A (Ta), 133A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View

SI2356DS-T1-GE3 - Tags

SI2356DS-T1-GE3 SI2356DS-T1-GE3 PDF SI2356DS-T1-GE3 datasheet SI2356DS-T1-GE3 specification SI2356DS-T1-GE3 image SI2356DS-T1-GE3 India Renesas Electronics India SI2356DS-T1-GE3 buy SI2356DS-T1-GE3 SI2356DS-T1-GE3 price SI2356DS-T1-GE3 distributor SI2356DS-T1-GE3 supplier SI2356DS-T1-GE3 wholesales