Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2356DS-T1-GE3

SI2356DS-T1-GE3

SI2356DS-T1-GE3

Part NumberSI2356DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 4.3A SOT-23

DatasheetSI2356DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount TO-236

To learn about the specification of SI2356DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2356DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2356DS-T1-GE3.
We are offering SI2356DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2356DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2356DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	51mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 20V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2356DS-T1-GE3 - Related Products

	2N7002W	ON Semiconductor, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SC-70 (SOT323),	View
	STF13NM60ND	STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, FDmesh™ II	View
	BUK7M6R3-40EX	Nexperia USA Inc., N-Channel 40V 70A (Tc) 79W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
	SI7106DN-T1-E3	Vishay Siliconix, N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	FDMS7580	ON Semiconductor, N-Channel 25V 15A (Ta), 29A (Tc) 2.5W (Ta), 27W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	STN3NF06	STMicroelectronics, N-Channel 60V 4A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II	View
	SQJA20EP-T1_GE3	Vishay Siliconix, N-Channel 200V 22.5A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SUM70040M-GE3	Vishay Siliconix, N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®	View
	IPDD60R080G7XTMA1	Infineon Technologies, N-Channel 600V 29A (Tc) 174W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	PSMN1R0-25YLDX	Nexperia USA Inc., N-Channel 25V 100A (Tc) 160W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	RQ5E040AJTCL	Rohm Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	IPB020N04NGATMA1	Infineon Technologies, N-Channel 40V 140A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™	View

SI2356DS-T1-GE3 - Tags

SI2356DS-T1-GE3 SI2356DS-T1-GE3 PDF SI2356DS-T1-GE3 datasheet SI2356DS-T1-GE3 specification SI2356DS-T1-GE3 image SI2356DS-T1-GE3 India Renesas Electronics India SI2356DS-T1-GE3 buy SI2356DS-T1-GE3 SI2356DS-T1-GE3 price SI2356DS-T1-GE3 distributor SI2356DS-T1-GE3 supplier SI2356DS-T1-GE3 wholesales