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IRF60B217

IRF60B217

Part NumberIRF60B217

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 60A

DatasheetIRF60B217

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 60A (Tc) 83W (Tc) Through Hole TO-220AB

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IRF60B217 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF60B217
Standard Package	1000
Manufacturer	Infineon Technologies
Series	StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 36A, 10V
Vgs(th) (Max) @ Id	3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2230pF @ 25V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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