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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3707ZPbF, IRFU3707ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPB60R280P7ATMA1
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Infineon Technologies, N-Channel 40V 100A (Tc) 170W (Tc) Through Hole TO-220AB, HEXFET®
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BUK9Y27-40B,115
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Infineon Technologies, N-Channel 100V 23A (Ta), 100A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3, OptiMOS™
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FQD1N60CTM
ON Semiconductor, N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®
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BUK9M6R6-30EX
Nexperia USA Inc., N-Channel 30V 70A (Tc) 75W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101, TrenchMOS™
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