Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISS42DN-T1-GE3

SISS42DN-T1-GE3

SISS42DN-T1-GE3

Part NumberSISS42DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CHAN 100V POWERPAK 1212

DatasheetSISS42DN

Package / CasePowerPAK® 1212-8S

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 11.8A (Ta), 40.5A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3)

To learn about the specification of SISS42DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISS42DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISS42DN-T1-GE3.
We are offering SISS42DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISS42DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISS42DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	11.8A (Ta), 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	14.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1850pF @ 50V
FET Feature	-
Power Dissipation (Max)	4.8W (Ta), 57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

SISS42DN-T1-GE3 - Related Products

	IRFBC40APBF	Vishay Siliconix, N-Channel 600V 6.2A (Tc) 125W (Tc) Through Hole TO-220AB,	View
	NX138AKR	Nexperia USA Inc., N-Channel 60V 190mA (Ta) 325mW (Ta) Surface Mount TO-236AB,	View
	RTQ035N03TR	Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	FDMA410NZ	ON Semiconductor, N-Channel 20V 9.5A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	IXFX230N20T	IXYS, N-Channel 200V 230A (Tc) 1670W (Tc) Through Hole PLUS247™-3, GigaMOS™	View
	FK6K02010L	Panasonic Electronic Components, N-Channel 20V 4.5A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,	View
	FDPF5N50T	ON Semiconductor, N-Channel 500V 5A (Tc) 28W (Tc) Through Hole TO-220F, UniFET™	View
	R6030ENX	Rohm Semiconductor, N-Channel 600V 30A (Tc) 40W (Tc) Through Hole TO-220FM,	View
	PSMN5R2-60YLX	Nexperia USA Inc., N-Channel 60V 100A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	NTTFS4C06NTAG	ON Semiconductor, N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SQJ414EP-T1_GE3	Vishay Siliconix, N-Channel 30V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	SUD40N10-25-E3	Vishay Siliconix, N-Channel 100V 40A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View

SISS42DN-T1-GE3 - Tags

SISS42DN-T1-GE3 SISS42DN-T1-GE3 PDF SISS42DN-T1-GE3 datasheet SISS42DN-T1-GE3 specification SISS42DN-T1-GE3 image SISS42DN-T1-GE3 India Renesas Electronics India SISS42DN-T1-GE3 buy SISS42DN-T1-GE3 SISS42DN-T1-GE3 price SISS42DN-T1-GE3 distributor SISS42DN-T1-GE3 supplier SISS42DN-T1-GE3 wholesales