Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2366DS-T1-GE3

SI2366DS-T1-GE3

SI2366DS-T1-GE3

Part NumberSI2366DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 5.8A SOT-23

DatasheetSI2366DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount

To learn about the specification of SI2366DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2366DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2366DS-T1-GE3.
We are offering SI2366DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2366DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2366DS-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	335pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2366DS-T1-GE3 - Related Products

	STD6N90K5	STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ K5	View
	IRFR4615TRLPBF	Infineon Technologies, N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D-Pak, HEXFET®	View
	STH315N10F7-6	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, DeepGATE™, STripFET™ VII	View
	IRF3708PBF	Infineon Technologies, N-Channel 30V 62A (Tc) 87W (Tc) Through Hole TO-220AB, HEXFET®	View
	STL2N80K5	STMicroelectronics, N-Channel 800V 2A (Tc) 33W (Tc) Surface Mount PowerFlat™ (5x6), SuperMESH5™	View
	AON7524	Alpha & Omega Semiconductor Inc., N-Channel 30V 25A (Ta), 28A (Tc) 3.1W (Ta), 32W (Tc) Surface Mount 8-DFN (3x3), AlphaMOS	View
	SK8403180L	Panasonic Electronic Components, N-Channel 30V 12A (Ta), 39A (Tc) 2W (Ta), 19W (Tc) Surface Mount HSSO8-F1-B,	View
	CDM3-800 TR13	Central Semiconductor Corp, N-Channel 800V 3A (Tc) 80W (Tc) Surface Mount DPAK,	View
	DMN2028USS-13	Diodes Incorporated, N-Channel 20V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO,	View
	BUK9212-55B,118	Nexperia USA Inc., N-Channel 55V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™	View
	DMN65D8LQ-7	Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
	R6009JND3TL1	Rohm Semiconductor, N-Channel 600V 9A (Tc) 125W (Tc) Surface Mount TO-252,	View

SI2366DS-T1-GE3 - Tags

SI2366DS-T1-GE3 SI2366DS-T1-GE3 PDF SI2366DS-T1-GE3 datasheet SI2366DS-T1-GE3 specification SI2366DS-T1-GE3 image SI2366DS-T1-GE3 India Renesas Electronics India SI2366DS-T1-GE3 buy SI2366DS-T1-GE3 SI2366DS-T1-GE3 price SI2366DS-T1-GE3 distributor SI2366DS-T1-GE3 supplier SI2366DS-T1-GE3 wholesales