SI2366DS-T1-GE3
SI2366DS-T1-GE3
Part Number SI2366DS-T1-GE3 Description MOSFET N-CH 30V 5.8A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 5.8A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2366DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2366DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2366DS-T1-GE3.
We are offering SI2366DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2366DS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2366DS-T1-GE3 Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 36mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 335pF @ 15V FET Feature - Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2366DS-T1-GE3 - Related ProductsMore >>
DMN62D0UW-7 Diodes Incorporated, N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount SOT-323,
View
IRFR3504ZTRPBF Infineon Technologies, N-Channel 40V 42A (Tc) 90W (Tc) Surface Mount D-Pak, HEXFET®
View
STL66N3LLH5 STMicroelectronics, N-Channel 30V 80A (Tc) 72W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™ V
View
SIHG35N60EF-GE3 Vishay Siliconix, N-Channel 600V 32A (Tc) 250W (Tc) Through Hole TO-247AC, EF
View
STB28N65M2 STMicroelectronics, N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ M2
View
IPD30N10S3L34ATMA1 Infineon Technologies, N-Channel 100V 30A (Tc) 57W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
IRFS3806TRLPBF Infineon Technologies, N-Channel 60V 43A (Tc) 71W (Tc) Surface Mount D2PAK, HEXFET®
View
IRFP4368PBF Infineon Technologies, N-Channel 75V 195A (Tc) 520W (Tc) Through Hole TO-247AC, HEXFET®
View
SIHD6N80E-GE3 Vishay Siliconix, N-Channel 800V 5.4A (Tc) 78W (Tc) Surface Mount D-PAK (TO-252AA),
View
BSP88H6327XTSA1 Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
SSM3K376R,LF Toshiba Semiconductor and Storage, N-Channel 30V 4A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSVII-H
View
IPW90R120C3FKSA1 Infineon Technologies, N-Channel 900V 36A (Tc) 417W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SI2366DS-T1-GE3 - Tags
English
