BSC046N02KSGAUMA1
BSC046N02KSGAUMA1
Part Number BSC046N02KSGAUMA1
Description MOSFET N-CH 20V 80A TDSON-8
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 20V 19A (Ta), 80A (Tc) 2.8W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-1
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BSC046N02KSGAUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC046N02KS G
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 27.6nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 10V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-1
Package / Case 8-PowerTDFN
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