Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2367DS-T1-GE3

SI2367DS-T1-GE3

SI2367DS-T1-GE3

Part NumberSI2367DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.8A SOT-23

DatasheetSI2367DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2367DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2367DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2367DS-T1-GE3.
We are offering SI2367DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2367DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2367DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	561pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2367DS-T1-GE3 - Related Products

	IRLML9303TRPBF	Infineon Technologies, P-Channel 30V 2.3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	SI1411DH-T1-GE3	Vishay Siliconix, P-Channel 150V 420mA (Ta) 1W (Ta) Surface Mount SOT-363, TrenchFET®	View
	SI3429EDV-T1-GE3	Vishay Siliconix, P-Channel 20V 8A (Ta), 8A (Tc) 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	ZXMP3A16N8TA	Diodes Incorporated, P-Channel 30V 5.6A (Ta) 1.9W (Ta) Surface Mount 8-SO,	View
	IRFD9014PBF	Vishay Siliconix, P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	DMP10H400SEQ-13	Diodes Incorporated, P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223,	View
	DMP1100UCB4-7	Diodes Incorporated, P-Channel 12V 2.5A (Ta) 670mW (Ta) Surface Mount X2-WLB0808-4, Automotive, AEC-Q101	View
	SI7149DP-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 69W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	NTLUS3A90PZTAG	ON Semiconductor, P-Channel 20V 2.6A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6), µCool™	View
	DMP2004K-7	Diodes Incorporated, P-Channel 20V 600mA (Ta) 550mW (Ta) Surface Mount SOT-23-3,	View
	SQD40P10-40L_GE3	Vishay Siliconix, P-Channel 100V 38A (Tc) 136W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	SSM6J213FE(TE85L,F	Toshiba Semiconductor and Storage, P-Channel 20V 2.6A (Ta) 500mW (Ta) Surface Mount ES6, U-MOSVI	View

SI2367DS-T1-GE3 - Tags

SI2367DS-T1-GE3 SI2367DS-T1-GE3 PDF SI2367DS-T1-GE3 datasheet SI2367DS-T1-GE3 specification SI2367DS-T1-GE3 image SI2367DS-T1-GE3 India Renesas Electronics India SI2367DS-T1-GE3 buy SI2367DS-T1-GE3 SI2367DS-T1-GE3 price SI2367DS-T1-GE3 distributor SI2367DS-T1-GE3 supplier SI2367DS-T1-GE3 wholesales