Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2367DS-T1-GE3

SI2367DS-T1-GE3

SI2367DS-T1-GE3

Part NumberSI2367DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.8A SOT-23

DatasheetSI2367DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2367DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2367DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2367DS-T1-GE3.
We are offering SI2367DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2367DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2367DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	66mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	561pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2367DS-T1-GE3 - Related Products

	DMP2305U-7	Diodes Incorporated, P-Channel 20V 4.2A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	CSD23381F4	Texas Instruments, P-Channel 12V 2.3A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™	View
	RD3L140SPFRATL	Rohm Semiconductor, P-Channel 60V 14A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	SQA401EEJ-T1_GE3	Vishay Siliconix, P-Channel 20V 2.68A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	STL60P4LLF6	STMicroelectronics, P-Channel 40V 60A (Tc) 100W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F6	View
	ZXMP6A17E6QTA	Diodes Incorporated, P-Channel 60V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
	ZXMP10A16KTC	Diodes Incorporated, P-Channel 100V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View
	SQM110P06-8M9L_GE3	Vishay Siliconix, P-Channel 60V 110A (Tc) 230W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	NTS4173PT1G	ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),	View
	SQJ433EP-T1_GE3	Vishay Siliconix, P-Channel 30V 75A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	BVSS84LT1G	ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3,	View
	AONR21117	Alpha & Omega Semiconductor Inc., P-Channel 20V 5W (Ta), 43W (Tc) Surface Mount 8-DFN-EP (3x3),	View

SI2367DS-T1-GE3 - Tags

SI2367DS-T1-GE3 SI2367DS-T1-GE3 PDF SI2367DS-T1-GE3 datasheet SI2367DS-T1-GE3 specification SI2367DS-T1-GE3 image SI2367DS-T1-GE3 India Renesas Electronics India SI2367DS-T1-GE3 buy SI2367DS-T1-GE3 SI2367DS-T1-GE3 price SI2367DS-T1-GE3 distributor SI2367DS-T1-GE3 supplier SI2367DS-T1-GE3 wholesales