SI2367DS-T1-GE3
SI2367DS-T1-GE3
Part Number SI2367DS-T1-GE3 Description MOSFET P-CH 20V 3.8A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 3.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2367DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2367DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2367DS-T1-GE3.
We are offering SI2367DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2367DS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2367DS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 66mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 561pF @ 10V FET Feature - Power Dissipation (Max) 960mW (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2367DS-T1-GE3 - Related ProductsMore >>
DMP6110SVT-7 Diodes Incorporated, P-Channel 60V 7.3A (Tc) 1.2W (Ta) Surface Mount TSOT-26,
View
FDN360P ON Semiconductor, P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
NTNUS3171PZT5G ON Semiconductor, P-Channel 20V 150mA (Ta) 125mW (Ta) Surface Mount SOT-1123,
View
SSM3J358R,LF Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII
View
SI7113ADN-T1-GE3 Vishay Siliconix, P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
ZVP3310A Diodes Incorporated, P-Channel 100V 140mA (Ta) 625mW (Ta) Through Hole TO-92-3,
View
IRF7606TRPBF Infineon Technologies, P-Channel 30V 3.6A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®
View
SI2301BDS-T1-E3 Vishay Siliconix, P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
PMPB27EP,115 Nexperia USA Inc., P-Channel 30V 6.1A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,
View
SUD50P06-15L-E3 Vishay Siliconix, P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
ZVP4525E6TA Diodes Incorporated, P-Channel 250V 197mA (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
IRF7404TRPBF Infineon Technologies, P-Channel 20V 6.7A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SI2367DS-T1-GE3 - Tags
English
