Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

Part NumberSQ2309ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 60V SOT23

DatasheetSQ2309ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.7A (Tc) 2W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2309ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2309ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2309ES-T1_GE3.
We are offering SQ2309ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2309ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2309ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2309ES-T1_GE3 - Related Products

	AUIRF5210STRL	Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	IRFR9020PBF	Vishay Siliconix, P-Channel 50V 9.9A (Tc) 42W (Tc) Surface Mount D-Pak,	View
	TPN4R712MD,L1Q	Toshiba Semiconductor and Storage, P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVI	View
	SSM3J65CTC,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 700mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII	View
	SPB18P06PGATMA1	Infineon Technologies, P-Channel 60V 18.7A (Ta) 81.1W (Ta) Surface Mount D²PAK (TO-263AB), SIPMOS®	View
	IPP120P04P4L03AKSA1	Infineon Technologies, P-Channel 40V 120A (Tc) 136W (Tc) Through Hole PG-TO220-3-1, Automotive, AEC-Q101, OptiMOS™	View
	STL60P4LLF6	STMicroelectronics, P-Channel 40V 60A (Tc) 100W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F6	View
	SI7145DP-T1-GE3	Vishay Siliconix, P-Channel 30V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMP6050SFG-13	Diodes Incorporated, P-Channel 60V 4.8A (Ta) 1.1W (Ta) Surface Mount PowerDI3333-8,	View
	RSL020P03TR	Rohm Semiconductor, P-Channel 30V 2A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	NTHS5443T1G	ON Semiconductor, P-Channel 20V 3.6A (Ta) 1.3W (Ta) Surface Mount ChipFET™,	View
	AOI21357	Alpha & Omega Semiconductor Inc., P-Channel 30V 23A (Ta), 70A (Tc) 6.2W (Ta), 78W (Tc) Through Hole TO-251A,	View

SQ2309ES-T1_GE3 - Tags

SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 PDF SQ2309ES-T1_GE3 datasheet SQ2309ES-T1_GE3 specification SQ2309ES-T1_GE3 image SQ2309ES-T1_GE3 India Renesas Electronics India SQ2309ES-T1_GE3 buy SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 price SQ2309ES-T1_GE3 distributor SQ2309ES-T1_GE3 supplier SQ2309ES-T1_GE3 wholesales