Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

Part NumberSQ2309ES-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 60V SOT23

DatasheetSQ2309ES

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.7A (Tc) 2W (Tc) Surface Mount TO-236 (SOT-23)

To learn about the specification of SQ2309ES-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQ2309ES-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQ2309ES-T1_GE3.
We are offering SQ2309ES-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQ2309ES-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQ2309ES
Standard Package	1
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	336mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236 (SOT-23)
Package / Case	TO-236-3, SC-59, SOT-23-3

SQ2309ES-T1_GE3 - Related Products

	FDS9431A-F085	ON Semiconductor, P-Channel 20V 3.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, Automotive, AEC-Q101	View
	SI8487DB-T1-E1	Vishay Siliconix, P-Channel 30V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	SI4413ADY-T1-E3	Vishay Siliconix, P-Channel 30V 10.5A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SI2343DS-T1-GE3	Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount, TrenchFET®	View
	SQ1421EDH-T1_GE3	Vishay Siliconix, P-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®	View
	SI7115DN-T1-E3	Vishay Siliconix, P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	ZXMP6A17GTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	QS5U28TR	Rohm Semiconductor, P-Channel 20V 2A (Ta) 1.25W (Ta) Surface Mount TSMT5,	View
	SIS443DN-T1-GE3	Vishay Siliconix, P-Channel 40V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	NTR0202PLT1G	ON Semiconductor, P-Channel 20V 400mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	RQ7E055ATTCR	Rohm Semiconductor, P-Channel 30V 5.5A (Tc) 1.5W (Tc) Surface Mount TSMT8,	View
	SI3477DV-T1-GE3	Vishay Siliconix, P-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View

SQ2309ES-T1_GE3 - Tags

SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 PDF SQ2309ES-T1_GE3 datasheet SQ2309ES-T1_GE3 specification SQ2309ES-T1_GE3 image SQ2309ES-T1_GE3 India Renesas Electronics India SQ2309ES-T1_GE3 buy SQ2309ES-T1_GE3 SQ2309ES-T1_GE3 price SQ2309ES-T1_GE3 distributor SQ2309ES-T1_GE3 supplier SQ2309ES-T1_GE3 wholesales