SI4401FDY-T1-GE3
SI4401FDY-T1-GE3
Part Number SI4401FDY-T1-GE3 Description MOSFET P-CHAN 40V SO-8 Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 40V 9.9A (Ta), 14A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
To learn about the specification of SI4401FDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4401FDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4401FDY-T1-GE3.
We are offering SI4401FDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4401FDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4401FDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Gen III Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 14.2mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 20V FET Feature - Power Dissipation (Max) 2.5W (Ta), 5W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4401FDY-T1-GE3 - Related ProductsMore >>
CSD23202W10 Texas Instruments, P-Channel 12V 2.2A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1), NexFET™
View
SBSS84LT1G ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SUM110P04-05-E3 Vishay Siliconix, P-Channel 40V 110A (Tc) 15W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
View
SI3473DDV-T1-GE3 Vishay Siliconix, P-Channel 12V 8A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET® Gen III
View
RD3P130SPTL1 Rohm Semiconductor, P-Channel 100V 13A (Ta) 20W (Tc) Surface Mount TO-252,
View
DMP32D4SW-7 Diodes Incorporated, P-Channel 30V 250mA (Ta) 300mW (Ta) Surface Mount SOT-323,
View
IRF7606TRPBF Infineon Technologies, P-Channel 30V 3.6A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®
View
SUM70101EL-GE3 Vishay Siliconix, P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), TrenchFET®
View
FDFM2P110 ON Semiconductor, P-Channel 20V 3.5A (Ta) 2W (Ta) Surface Mount MicroFET 3x3mm, PowerTrench®
View
IRFI9630GPBF Vishay Siliconix, P-Channel 200V 4.3A (Tc) 35W (Tc) Through Hole TO-220-3,
View
PMZ350UPEYL Nexperia USA Inc., P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006-3,
View
RQ5L015SPTL Rohm Semiconductor, P-Channel 60V 1.5A (Ta) 1W (Ta) Surface Mount TSMT3,
View
SI4401FDY-T1-GE3 - Tags
English
