SI2377EDS-T1-GE3
SI2377EDS-T1-GE3
Part Number SI2377EDS-T1-GE3 Description MOSFET P-CH 20V 4.4A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 4.4A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2377EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2377EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2377EDS-T1-GE3.
We are offering SI2377EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2377EDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2377EDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 61mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2377EDS-T1-GE3 - Related ProductsMore >>
TPS1100PWR Texas Instruments, P-Channel 15V 1.27A (Ta) 504mW (Ta) Surface Mount 8-TSSOP,
View
FDS6375 ON Semiconductor, P-Channel 20V 8A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
IRF5210STRLPBF Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®
View
ZXMP6A17E6TA Diodes Incorporated, P-Channel 60V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
SI4425BDY-T1-GE3 Vishay Siliconix, P-Channel 30V 8.8A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
SI7415DN-T1-E3 Vishay Siliconix, P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
IRF9530SPBF Vishay Siliconix, P-Channel 100V 12A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,
View
SSM3J351R,LF Toshiba Semiconductor and Storage, P-Channel 60V 3.5A (Ta) 2W (Ta) Surface Mount SOT-23F, U-MOSVI
View
ZXMP7A17GTA Diodes Incorporated, P-Channel 70V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,
View
SI3433CDV-T1-E3 Vishay Siliconix, P-Channel 20V 6A (Tc) 3.3W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
SUD50P10-43L-GE3 Vishay Siliconix, P-Channel 100V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252, TrenchFET®
View
NVTR0202PLT1G ON Semiconductor, P-Channel 20V 400mA (Ta) 225mW (Ta) Surface Mount SOT-23,
View
SI2377EDS-T1-GE3 - Tags
English
