SI3430DV-T1-GE3
SI3430DV-T1-GE3
Part Number SI3430DV-T1-GE3 Description MOSFET N-CH 100V 1.8A 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP
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SI3430DV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3430DV Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.14W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
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