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SI3430DV-T1-GE3

SI3430DV-T1-GE3

Part NumberSI3430DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 1.8A 6-TSOP

DatasheetSI3430DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 1.8A (Ta) 1.14W (Ta) Surface Mount 6-TSOP

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SI3430DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3430DV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	170mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.14W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

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SI3430DV-T1-GE3 - Tags

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