SI3443DDV-T1-GE3
SI3443DDV-T1-GE3
Part Number SI3443DDV-T1-GE3
Description MOSFET P-CHAN 20V TSOP6S
Package / Case SOT-23-6 Thin, TSOT-23-6
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 4A (Ta), 5.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3443DDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3443DDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3443DDV-T1-GE3.
We are offering SI3443DDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3443DDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3443DDV
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta), 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 47mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 10V
FET Feature -
Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
SI3443DDV-T1-GE3 - Related ProductsMore >>
SIA477EDJT-T1-GE3
Vishay Siliconix, P-Channel 12V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen III
View
BSS215PH6327XTSA1
Infineon Technologies, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
TSM3443CX6 RFG
Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Ta) 2W (Ta) Surface Mount SOT-26,
View
SI1013R-T1-GE3
Vishay Siliconix, P-Channel 20V 350mA (Ta) 150mW (Ta) Surface Mount SC-75A, TrenchFET®
View
FDN360P
ON Semiconductor, P-Channel 30V 2A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
SI7115DN-T1-E3
Vishay Siliconix, P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
SUD50P06-15L-E3
Vishay Siliconix, P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
View
TP5322K1-G
Microchip Technology, P-Channel 220V 120mA (Tj) 360mW (Ta) Surface Mount TO-236AB (SOT23),
View
VP2450N3-G
Microchip Technology, P-Channel 500V 100mA (Tj) 740mW (Ta) Through Hole TO-92-3,
View
TPS1100PWR
Texas Instruments, P-Channel 15V 1.27A (Ta) 504mW (Ta) Surface Mount 8-TSSOP,
View
ATP103-TL-H
ON Semiconductor, P-Channel 30V 55A (Ta) 50W (Tc) Surface Mount ATPAK,
View
FDN302P
ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
SI3443DDV-T1-GE3 - Tags