SI3456DDV-T1-E3
SI3456DDV-T1-E3
Part Number SI3456DDV-T1-E3 Description MOSFET N-CH 30V 6.3A 6TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 6.3A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3456DDV-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3456DDV-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3456DDV-T1-E3.
We are offering SI3456DDV-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3456DDV-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3456DDV Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 6.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 40mOhm @ 5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 325pF @ 15V FET Feature - Power Dissipation (Max) 1.7W (Ta), 2.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
SI3456DDV-T1-E3 - Related ProductsMore >>
AONS66612 Alpha & Omega Semiconductor Inc., N-Channel 60V Surface Mount 8-DFN-EP (5x6), AlphaSGT™
View
PHB32N06LT,118 Nexperia USA Inc., N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK, TrenchMOS™
View
SSM3K16CT,L3F Toshiba Semiconductor and Storage, N-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSIV
View
TK9J90E,S1E Toshiba Semiconductor and Storage, N-Channel 900V 9A (Ta) 250W (Tc) Through Hole TO-3P(N),
View
STD2NK90ZT4 STMicroelectronics, N-Channel 900V 2.1A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH™
View
ZVN2120GTA Diodes Incorporated, N-Channel 200V 320mA (Ta) 2W (Ta) Surface Mount SOT-223,
View
AOT10N60 Alpha & Omega Semiconductor Inc., N-Channel 600V 10A (Tc) 250W (Tc) Through Hole TO-220,
View
SUP40N25-60-E3 Vishay Siliconix, N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®
View
IRFS7430TRLPBF Infineon Technologies, N-Channel 40V 195A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®, StrongIRFET™
View
IPP055N03LGXKSA1 Infineon Technologies, N-Channel 30V 50A (Tc) 68W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
FQPF9N90CT ON Semiconductor, N-Channel 900V 8A (Tc) 68W (Tc) Through Hole TO-220F, QFET®
View
IXFH22N60P3 IXYS, N-Channel 600V 22A (Tc) 500W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
View
SI3456DDV-T1-E3 - Tags
English
