Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

Part NumberSI3458BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.1A 6-TSOP

DatasheetSI3458BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3458BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3458BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3458BDV-T1-GE3.
We are offering SI3458BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3458BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3458BDV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3458BDV-T1-GE3 - Related Products

	IRFR825TRPBF	Infineon Technologies, N-Channel 500V 6A (Tc) 119W (Tc) Surface Mount D-Pak, HEXFET®	View
	BSC190N12NS3GATMA1	Infineon Technologies, N-Channel 120V 8.6A (Ta), 44A (Tc) 69W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	IXFY4N60P3	IXYS, N-Channel 600V 4A (Tc) 114W (Tc) Surface Mount TO-252, HiPerFET™, Polar3™	View
	STP80NF55-06FP	STMicroelectronics, N-Channel 55V 60A (Tc) 45W (Tc) Through Hole TO-220FP, STripFET™ II	View
	SI2302A-TP	Micro Commercial Co, N-Channel 20V 3A 1.25W Surface Mount SOT-23,	View
	IPB60R280C6ATMA1	Infineon Technologies, N-Channel 600V 13.8A (Tc) 104W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™	View
	PMZB370UNE,315	Nexperia USA Inc., N-Channel 30V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	SIHU6N62E-GE3	Vishay Siliconix, N-Channel 620V 6A (Tc) 78W (Tc) Through Hole IPAK (TO-251),	View
	SUD25N15-52-E3	Vishay Siliconix, N-Channel 150V 25A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	FDD86252	ON Semiconductor, N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	2N7002KT1G	ON Semiconductor, N-Channel 60V 320mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	SI7454DDP-T1-GE3	Vishay Siliconix, N-Channel 100V 21A (Tc) 4.1W (Ta), 29.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View

SI3458BDV-T1-GE3 - Tags

SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 PDF SI3458BDV-T1-GE3 datasheet SI3458BDV-T1-GE3 specification SI3458BDV-T1-GE3 image SI3458BDV-T1-GE3 India Renesas Electronics India SI3458BDV-T1-GE3 buy SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 price SI3458BDV-T1-GE3 distributor SI3458BDV-T1-GE3 supplier SI3458BDV-T1-GE3 wholesales