Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

Part NumberSI3458BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.1A 6-TSOP

DatasheetSI3458BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3458BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3458BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3458BDV-T1-GE3.
We are offering SI3458BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3458BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3458BDV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3458BDV-T1-GE3 - Related Products

	TK35A65W,S5X	Toshiba Semiconductor and Storage, N-Channel 650V 35A (Ta) 50W (Tc) Through Hole TO-220SIS, DTMOSIV	View
	STB9NK60ZT4	STMicroelectronics, N-Channel 600V 7A (Tc) 125W (Tc) Surface Mount D2PAK, SuperMESH™	View
	SSM3K72KCT,L3F	Toshiba Semiconductor and Storage, N-Channel 60V 400mA (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVII-H	View
	TPH2R306NH,L1Q	Toshiba Semiconductor and Storage, N-Channel 60V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	IXFN80N60P3	IXYS, N-Channel 600V 66A (Tc) 960W (Tc) Chassis Mount SOT-227B, HiPerFET™, Polar3™	View
	IPD50N10S3L16ATMA1	Infineon Technologies, N-Channel 100V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	IPB035N08N3GATMA1	Infineon Technologies, N-Channel 80V 100A (Tc) 214W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	DMN2100UDM-7	Diodes Incorporated, N-Channel 20V 3.3A (Ta) 1W (Ta) Surface Mount SOT-26,	View
	CMS16N06D-HF	Comchip Technology, N-Channel 60V 4.4A (Ta), 16A (Tc) 2W (Ta), 27W (Tc) Surface Mount D-PAK (TO-252),	View
	FDMC8015L	ON Semiconductor, N-Channel 40V 7A (Ta), 18A (Tc) 2.3W (Ta), 24W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	NX138AKR	Nexperia USA Inc., N-Channel 60V 190mA (Ta) 325mW (Ta) Surface Mount TO-236AB,	View
	TN0106N3-G	Microchip Technology, N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,	View

SI3458BDV-T1-GE3 - Tags

SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 PDF SI3458BDV-T1-GE3 datasheet SI3458BDV-T1-GE3 specification SI3458BDV-T1-GE3 image SI3458BDV-T1-GE3 India Renesas Electronics India SI3458BDV-T1-GE3 buy SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 price SI3458BDV-T1-GE3 distributor SI3458BDV-T1-GE3 supplier SI3458BDV-T1-GE3 wholesales