Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

Part NumberSI3458BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 4.1A 6-TSOP

DatasheetSI3458BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 4.1A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3458BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3458BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3458BDV-T1-GE3.
We are offering SI3458BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3458BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3458BDV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	100mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3458BDV-T1-GE3 - Related Products

	BSS123,215	Nexperia USA Inc., N-Channel 100V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB, TrenchMOS™	View
	STH310N10F7-2	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII	View
	STD6NF10T4	STMicroelectronics, N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK, STripFET™	View
	STH410N4F7-6AG	STMicroelectronics, N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F7	View
	RCJ200N20TL	Rohm Semiconductor, N-Channel 200V 20A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS,	View
	IRL1004PBF	Infineon Technologies, N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	STL13N60DM2	STMicroelectronics, N-Channel 600V 8A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ DM2	View
	SUM80090E-GE3	Vishay Siliconix, N-Channel 150V 128A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®	View
	NX3008NBKMB,315	Nexperia USA Inc., N-Channel 30V 530mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	IXFH400N075T2	IXYS, N-Channel 75V 400A (Tc) 1000W (Tc) Through Hole TO-247AD (IXFH), GigaMOS™, HiPerFET™, TrenchT2™	View
	BS270	ON Semiconductor, N-Channel 60V 400mA (Ta) 625mW (Ta) Through Hole TO-92-3,	View
	BSC025N03LSGATMA1	Infineon Technologies, N-Channel 30V 25A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™	View

SI3458BDV-T1-GE3 - Tags

SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 PDF SI3458BDV-T1-GE3 datasheet SI3458BDV-T1-GE3 specification SI3458BDV-T1-GE3 image SI3458BDV-T1-GE3 India Renesas Electronics India SI3458BDV-T1-GE3 buy SI3458BDV-T1-GE3 SI3458BDV-T1-GE3 price SI3458BDV-T1-GE3 distributor SI3458BDV-T1-GE3 supplier SI3458BDV-T1-GE3 wholesales