Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3477DV-T1-GE3

SI3477DV-T1-GE3

SI3477DV-T1-GE3

Part NumberSI3477DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 8A 6-TSOP

DatasheetSI3477DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3477DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3477DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3477DV-T1-GE3.
We are offering SI3477DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3477DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3477DV
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	17.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 6V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3477DV-T1-GE3 - Related Products

	IRF5305STRLPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK, HEXFET®	View
	BUK6Y57-60PX	Nexperia USA Inc., P-Channel 60V 23A (Ta) 66W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	DMP6110SSS-13	Diodes Incorporated, P-Channel 60V 1.5W (Ta) Surface Mount 8-SO,	View
	BSS209PWH6327XTSA1	Infineon Technologies, P-Channel 20V 630mA (Tc) 300mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™	View
	SI4401BDY-T1-GE3	Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SISS27DN-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View
	SSM3J35CT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI	View
	SI1021R-T1-GE3	Vishay Siliconix, P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A, TrenchFET®	View
	PMV65XP,215	Nexperia USA Inc., P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB,	View
	DMP2021UFDE-7	Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	CSD25485F5T	Texas Instruments, P-Channel 20V 5.3A (Ta) 1.4W (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	SI2343DS-T1-E3	Vishay Siliconix, P-Channel 30V 3.1A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View

SI3477DV-T1-GE3 - Tags

SI3477DV-T1-GE3 SI3477DV-T1-GE3 PDF SI3477DV-T1-GE3 datasheet SI3477DV-T1-GE3 specification SI3477DV-T1-GE3 image SI3477DV-T1-GE3 India Renesas Electronics India SI3477DV-T1-GE3 buy SI3477DV-T1-GE3 SI3477DV-T1-GE3 price SI3477DV-T1-GE3 distributor SI3477DV-T1-GE3 supplier SI3477DV-T1-GE3 wholesales