SI3499DV-T1-GE3
SI3499DV-T1-GE3
Part Number SI3499DV-T1-GE3
Description MOSFET P-CH 8V 5.3A 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description P-Channel 8V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
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SI3499DV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3499DV
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 750mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Vgs (Max) ±5V
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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