SI3900DV-T1-GE3
SI3900DV-T1-GE3
Part Number SI3900DV-T1-GE3 Description MOSFET 2N-CH 20V 2A 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
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SI3900DV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI3900DV Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2A Rds On (Max) @ Id, Vgs 125mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 830mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP Base Part Number SI3900
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