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SI7956DP-T1-GE3

SI7956DP-T1-GE3

Part NumberSI7956DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 150V 2.6A PPAK SO-8

DatasheetSI7956DP

Package / CasePowerPAK® SO-8 Dual

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 150V 2.6A 1.4W Surface Mount PowerPAK® SO-8 Dual

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SI7956DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI7956DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	2.6A
Rds On (Max) @ Id, Vgs	105mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8 Dual
Supplier Device Package	PowerPAK® SO-8 Dual
Base Part Number	SI7956

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SI7956DP-T1-GE3 - Tags

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