Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4101DY-T1-GE3
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	203nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8190pF @ 15V
FET Feature	-
Power Dissipation (Max)	6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

PMV35EPER	Nexperia USA Inc., P-Channel 30V 5.3A (Ta) 480mW (Ta), 1.2W (Tc) Surface Mount TO-236AB,	View
FQP12P20	ON Semiconductor, P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®	View
SSM6J216FE,LF	Toshiba Semiconductor and Storage, P-Channel 12V 4.8A (Ta) 700mW (Ta) Surface Mount ES6, U-MOSVI	View
2SJ661-DL-1E	ON Semiconductor, P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Surface Mount TO-263-2,	View
RW1C025ZPT2CR	Rohm Semiconductor, P-Channel 20V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,	View
PMV65XPEAR	Nexperia USA Inc., P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB,	View
PMV50XPR	Nexperia USA Inc., P-Channel 20V 3.6A (Ta) 490mW (Ta), 4.63W (Tc) Surface Mount TO-236AB,	View
RTR020P02TL	Rohm Semiconductor, P-Channel 20V 2A (Ta) 1W (Ta) Surface Mount TSMT3,	View
ECH8308-TL-H	ON Semiconductor, P-Channel 12V 10A (Ta) 1.6W (Ta) Surface Mount 8-ECH,	View
IRF9328TRPBF	Infineon Technologies, P-Channel 30V 12A (Tc) 2.5W (Ta) Surface Mount 8-SO, HEXFET®	View
STS6P3LLH6	STMicroelectronics, P-Channel 30V 6A (Ta) 2.7W (Ta) Surface Mount 8-SO, DeepGATE™, STripFET™ VI	View
IRF9Z34STRLPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View

SI4101DY-T1-GE3

Part NumberSI4101DY-T1-GE3