SQS407ENW-T1_GE3
SQS407ENW-T1_GE3
Part Number SQS407ENW-T1_GE3 Description MOSFET P-CH 30V PPAK 1212-8W Package / Case PowerPAK® 1212-8WUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8W
To learn about the specification of SQS407ENW-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQS407ENW-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQS407ENW-T1_GE3.
We are offering SQS407ENW-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SQS407ENW-T1_GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SQS407ENW Standard Package 3000 Manufacturer Vishay Siliconix Series Automotive, AEC-Q101, TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.8mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4572pF @ 20V FET Feature - Power Dissipation (Max) 62.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8W Package / Case PowerPAK® 1212-8W
SQS407ENW-T1_GE3 - Related ProductsMore >>
NVTFS5124PLTAG ON Semiconductor, P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
CSD25481F4 Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™
View
DMP2045U-7 Diodes Incorporated, P-Channel 20V 4.3A (Ta) 800mW (Ta) Surface Mount SOT-23,
View
FDN308P ON Semiconductor, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®
View
RF6C055BCTCR Rohm Semiconductor, P-Channel 20V 5.5A (Ta) 1W (Tc) Surface Mount TUMT6,
View
SI4427BDY-T1-E3 Vishay Siliconix, P-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
View
SSM6J507NU,LF Toshiba Semiconductor and Storage, P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
View
FQP17P10 ON Semiconductor, P-Channel 100V 16.5A (Tc) 100W (Tc) Through Hole TO-220-3, QFET®
View
FDMA291P ON Semiconductor, P-Channel 20V 6.6A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
View
DMP1081UCB4-7 Diodes Incorporated, P-Channel 12V 3A (Ta), 3.3A (Ta) 820mW (Ta) Surface Mount U-WLB1010-4,
View
CSD23280F3T Texas Instruments, P-Channel 12V 1.8A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
IRLML9303TRPBF Infineon Technologies, P-Channel 30V 2.3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SQS407ENW-T1_GE3 - Tags
English
