SI4116DY-T1-E3
SI4116DY-T1-E3
Part Number SI4116DY-T1-E3
Description MOSFET N-CH 25V 18A 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 25V 18A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
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SI4116DY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4116DY
Standard Package 2500
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1925pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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