Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4168DY-T1-GE3

SI4168DY-T1-GE3

SI4168DY-T1-GE3

Part NumberSI4168DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 24A 8-SOIC

DatasheetSI4168DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 24A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4168DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4168DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4168DY-T1-GE3.
We are offering SI4168DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4168DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4168DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1720pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4168DY-T1-GE3 - Related Products

	RS1P600BETB1	Rohm Semiconductor, N-Channel 100V 17.5A (Ta), 60A (Tc) 3W (Ta), 35W (Tc) Surface Mount 8-HSOP,	View
	STW9NK95Z	STMicroelectronics, N-Channel 950V 7A (Tc) 160W (Tc) Through Hole TO-247, SuperMESH™	View
	PMXB43UNEZ	Nexperia USA Inc., N-Channel 20V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3,	View
	BSL606SNH6327XTSA1	Infineon Technologies, N-Channel 60V 4.5A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-6, Automotive, AEC-Q101, OptiMOS™	View
	BSZ160N10NS3GATMA1	Infineon Technologies, N-Channel 100V 8A (Ta), 40A (Tc) 2.1W (Ta), 63W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	CSD17322Q5A	Texas Instruments, N-Channel 30V 87A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™	View
	FCD9N60NTM	ON Semiconductor, N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount D-Pak, SupreMOS™	View
	FQP13N10L	ON Semiconductor, N-Channel 100V 12.8A (Tc) 65W (Tc) Through Hole TO-220-3, QFET®	View
	RS1E200BNTB	Rohm Semiconductor, N-Channel 30V 20A (Ta) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP,	View
	STP36N55M5	STMicroelectronics, N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ V	View
	IRFS4321TRLPBF	Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®	View
	SQD50N04-5M6L_GE3	Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View

SI4168DY-T1-GE3 - Tags

SI4168DY-T1-GE3 SI4168DY-T1-GE3 PDF SI4168DY-T1-GE3 datasheet SI4168DY-T1-GE3 specification SI4168DY-T1-GE3 image SI4168DY-T1-GE3 India Renesas Electronics India SI4168DY-T1-GE3 buy SI4168DY-T1-GE3 SI4168DY-T1-GE3 price SI4168DY-T1-GE3 distributor SI4168DY-T1-GE3 supplier SI4168DY-T1-GE3 wholesales