Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

SI7892BDP-T1-GE3

Part NumberSI7892BDP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 15A PPAK SO-8

DatasheetSi7892BDP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 15A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

To learn about the specification of SI7892BDP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7892BDP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7892BDP-T1-GE3.
We are offering SI7892BDP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI7892BDP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si7892BDP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3775pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SI7892BDP-T1-GE3 - Related Products

	SQ1464EEH-T1_GE3	Vishay Siliconix, N-Channel 60V 440mA (Tc) 430mW (Tc) Surface Mount SC-70-6, Automotive, AEC-Q101, TrenchFET®	View
	FDP24N40	ON Semiconductor, N-Channel 400V 24A (Tc) 227W (Tc) Through Hole TO-220-3, UniFET™	View
	IXTH88N30P	IXYS, N-Channel 300V 88A (Tc) 600W (Tc) Through Hole TO-247 (IXTH), PolarHT™	View
	IRF730PBF	Vishay Siliconix, N-Channel 400V 5.5A (Tc) 74W (Tc) Through Hole TO-220AB,	View
	DMN2050L-7	Diodes Incorporated, N-Channel 20V 5.9A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,	View
	TK20A60U(Q,M)	Toshiba Semiconductor and Storage, N-Channel 600V 20A (Ta) 45W (Tc) Through Hole TO-220SIS, DTMOSII	View
	NTD18N06LT4G	ON Semiconductor, N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount DPAK,	View
	PMZ200UNEYL	Nexperia USA Inc., N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006-3,	View
	IXFX100N65X2	IXYS, N-Channel 650V 100A (Tc) 1040W (Tc) Through Hole PLUS247™-3, HiPerFET™	View
	STD2NK100Z	STMicroelectronics, N-Channel 1000V 1.85A (Tc) 70W (Tc) Surface Mount DPAK, SuperMESH™	View
	IRFS11N50APBF	Vishay Siliconix, N-Channel 500V 11A (Tc) 170W (Tc) Surface Mount D2PAK,	View
	AUIRF1404Z	Infineon Technologies, N-Channel 40V 160A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View

SI7892BDP-T1-GE3 - Tags

SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 PDF SI7892BDP-T1-GE3 datasheet SI7892BDP-T1-GE3 specification SI7892BDP-T1-GE3 image SI7892BDP-T1-GE3 India Renesas Electronics India SI7892BDP-T1-GE3 buy SI7892BDP-T1-GE3 SI7892BDP-T1-GE3 price SI7892BDP-T1-GE3 distributor SI7892BDP-T1-GE3 supplier SI7892BDP-T1-GE3 wholesales