Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4423DY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 600µA
Gate Charge (Qg) (Max) @ Vgs	175nC @ 5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

FQP12P20	ON Semiconductor, P-Channel 200V 11.5A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®	View
DMP4047SK3-13	Diodes Incorporated, P-Channel 40V 20A (Tc) 1.6W (Ta) Surface Mount TO-252,	View
SSM3J56ACT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI	View
BSO613SPVGHUMA1	Infineon Technologies, P-Channel 60V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8, SIPMOS®	View
FDMA910PZ	ON Semiconductor, P-Channel 20V 9.4A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
DMP32D9UFZ-7B	Diodes Incorporated, P-Channel 30V 200mA (Ta) 390mW (Ta) Surface Mount X2-DFN0606-3,	View
ZXMP6A17E6QTA	Diodes Incorporated, P-Channel 60V 2.3A (Ta) 1.1W (Ta) Surface Mount SOT-26,	View
2SJ168TE85LF	Toshiba Semiconductor and Storage, P-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,	View
PMN30XPX	Nexperia USA Inc., P-Channel 20V 5.2A (Ta) 550mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP,	View
STT4P3LLH6	STMicroelectronics, P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SOT-23-6, DeepGATE™, STripFET™ H6	View
SI3443BDV-T1-E3	Vishay Siliconix, P-Channel 20V 3.6A (Ta) 1.1W (Ta) Surface Mount 6-TSOP, TrenchFET®	View
DMP6110SVT-7	Diodes Incorporated, P-Channel 60V 7.3A (Tc) 1.2W (Ta) Surface Mount TSOT-26,	View

SI4423DY-T1-E3

Part NumberSI4423DY-T1-E3