Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4425DDY-T1-GE3

SI4425DDY-T1-GE3

SI4425DDY-T1-GE3

Part NumberSI4425DDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 19.7A 8-SOIC

DatasheetSI4425DDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 19.7A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SO

To learn about the specification of SI4425DDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4425DDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4425DDY-T1-GE3.
We are offering SI4425DDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4425DDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4425DDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	19.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2610pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4425DDY-T1-GE3 - Related Products

	FQD5P10TM	ON Semiconductor, P-Channel 100V 3.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak, QFET®	View
	SUD19P06-60-GE3	Vishay Siliconix, P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	IRFR9014TRPBF	Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	FDZ371PZ	ON Semiconductor, P-Channel 20V 3.7A (Ta) 1.7W (Ta) Surface Mount 4-WLCSP (1x1), PowerTrench®	View
	SQD50P03-07_GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 136W (Tc) Surface Mount TO-252AA,	View
	SI2369DS-T1-GE3	Vishay Siliconix, P-Channel 30V 7.6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount TO-236, TrenchFET®	View
	RSH070P05TB1	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP,	View
	SI1317DL-T1-GE3	Vishay Siliconix, P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SOT-323, TrenchFET®	View
	SSM3J35MFV,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount VESM, π-MOSVI	View
	IRF9Z34NPBF	Infineon Technologies, P-Channel 55V 19A (Tc) 68W (Tc) Through Hole TO-220AB, HEXFET®	View
	SI3469DV-T1-GE3	Vishay Siliconix, P-Channel 20V 5A (Ta) 1.14W (Ta) Surface Mount 6-TSOP, TrenchFET®	View
	SQA401EJ-T1_GE3	Vishay Siliconix, P-Channel 20V 3.75A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View

SI4425DDY-T1-GE3 - Tags

SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 PDF SI4425DDY-T1-GE3 datasheet SI4425DDY-T1-GE3 specification SI4425DDY-T1-GE3 image SI4425DDY-T1-GE3 India Renesas Electronics India SI4425DDY-T1-GE3 buy SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 price SI4425DDY-T1-GE3 distributor SI4425DDY-T1-GE3 supplier SI4425DDY-T1-GE3 wholesales