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SI4427BDY-T1-GE3

SI4427BDY-T1-GE3

Part NumberSI4427BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 9.7A 8SOIC

DatasheetSI4427BDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 9.7A (Ta) 1.5W (Ta) Surface Mount

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SI4427BDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4427BDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10.5mOhm @ 12.6A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	70nC @ 4.5V
Vgs (Max)	±12V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)

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SI4427BDY-T1-GE3 - Tags

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