Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4435DDY-T1-GE3

SI4435DDY-T1-GE3

SI4435DDY-T1-GE3

Part NumberSI4435DDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 11.4A 8-SOIC

DatasheetSi4435DDY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO

To learn about the specification of SI4435DDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4435DDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4435DDY-T1-GE3.
We are offering SI4435DDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4435DDY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si4435DDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4435DDY-T1-GE3 - Related Products

	SI7463ADP-T1-GE3	Vishay Siliconix, P-Channel 40V 46A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SUD50P08-25L-E3	Vishay Siliconix, P-Channel 80V 50A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	SI8499DB-T2-E1	Vishay Siliconix, P-Channel 20V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®	View
	RSD140P06TL	Rohm Semiconductor, P-Channel 60V 14A (Ta) 20W (Tc) Surface Mount CPT3,	View
	DMP4051LK3-13	Diodes Incorporated, P-Channel 40V 7.2A (Ta) 2.14W (Ta) Surface Mount TO-252-3,	View
	SI3483CDV-T1-E3	Vishay Siliconix, P-Channel 30V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount, TrenchFET®	View
	RD3H080SPTL1	Rohm Semiconductor, P-Channel 45V 8A (Ta) 15W (Tc) Surface Mount TO-252,	View
	SI4835DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI1403BDL-T1-GE3	Vishay Siliconix, P-Channel 20V 1.5A (Ta) 625mW (Ta) Surface Mount SC-70-6, TrenchFET®	View
	PMPB47XP,115	Nexperia USA Inc., P-Channel 30V 4A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6,	View
	SIA445EDJ-T1-GE3	Vishay Siliconix, P-Channel 20V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®	View
	STL42P4LLF6	STMicroelectronics, P-Channel 40V 42A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F6	View

SI4435DDY-T1-GE3 - Tags

SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 PDF SI4435DDY-T1-GE3 datasheet SI4435DDY-T1-GE3 specification SI4435DDY-T1-GE3 image SI4435DDY-T1-GE3 India Renesas Electronics India SI4435DDY-T1-GE3 buy SI4435DDY-T1-GE3 SI4435DDY-T1-GE3 price SI4435DDY-T1-GE3 distributor SI4435DDY-T1-GE3 supplier SI4435DDY-T1-GE3 wholesales